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IXGR60N60C2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGR60N60C2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 6 page ![]() © 2004 IXYS All rights reserved G = Gate C = Collector E = Emitter ISOPLUS247 (IXGR) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. BV CES I C = 1 mA, V GE = 0 V 600 V V GE(th) I C = 250 µA, V CE = VGE 3.0 5.0 V I CES V CE = VCES GR60N60C2 50 µA V GE = 0 V GR60N60C2D1 650 µA I GES V CE = 0 V, VGE = ±20 V ±100 nA V CE(sat) I C = 50 A, V GE = 15 V T J = 25°C 2.3 2.7 V Note 1 T J = 125°C 2.0 V HiPerFASTTM IGBT ISOPLUS247TM Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C; R GE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C (limited by leads) 75 A I C110 T C = 110°C 48 A I F110 T C = 110°C (IXGR60N60C2D1) 39 A I CM T C = 25°C, 1 ms 300 A SSOA V GE = 15 V, TVJ = 125°C, RG = 10 Ω I CM = 100 A (RBSOA) Clamped inductive load @ V CE ≤ 600 V P C T C = 25°C 250 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C V ISOL 50/60 Hz RMS, t = 1m 2500 V Weight 5g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s DS99051D(05/04) V CES = 600 V I C25 = 75 A V CE(sat) = 2.7 V t fi(typ) = 35 ns (ISOLATED TAB) Lightspeed 2TM Series (Electrically Isolated Back Surface) IXGR 60N60C2 IXGR 60N60C2D1 Features DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications IXGR_C2 IXGR_C2D1 Preliminary Data Sheet C E |
Similar Part No. - IXGR60N60C2 |
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Similar Description - IXGR60N60C2 |
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