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SCS70DSTN-C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCS70DSTN-C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  SCS70DSTN-C 0.07A, 70V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente 01-Nov-2017 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 1 1 1 Cathode 2 2 2 2 Anode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection. FEATURES Low Diode Capacitance Low Forward Voltage Guard Ring Protected High Breakdown Voltage APPLICATION Ultra High-Speed Switching Voltage Clamping Mobile Communication, Digital (Still) Cameras, PDAs and PCMCIA Cards MARKING PACKAGE INFORMATION Package MPQ Leader Size WBFBP-02C 10K 7 inch ORDER INFORMATION MAXIMUM RATINGS CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Ratings Unit DC Reverse Voltage VR 70 V Forward Continuous Current IF 70 mA Peak Forward Surge Current @Tp<10ms IFSM 100 mA Power Dissipation PD 100 mW Thermal Resistance Junction-Ambient RθJA 1000 °C/W Junction, Storage Temperature Range TJ, TSTG 125, -55~150 °C ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage VF - - 0.41 V IF=1mA - - 0.75 IF=10mA - - 1 IF=15mA Reverse Current 1 IR - - 100 nA VR=50V - - 500 VR=70V Diode capacitance Cd - - 2 pF VR=0, f=1MHz Note: 1. Pulse Test: Pulse width=300µs; Duty cycle=0.02. Part Number Type SCS70DSTN-C Lead (Pb)-free and Halogen-free WBFBP-02C 1 1 1 1 2 2 2 2 A C B F M M G J H K E D L REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.95 1.05 G 0.25 0.35 B 0.55 0.65 H 0.25 0.35 C 0.44 0.55 J 0.275 0.47 D 0.470 REF. K 0.555 0.725 E 0.420 REF. L 0.010 0.100 F 0.27 0.37 M 0.030 REF. |
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