STB120NH03L datasheet(1/11 Pages) STMICROELECTRONICS

Part #	STB120NH03L

Description	N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION

PDF	11 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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October 2003

STB120NH03L

N-CHANNEL 30V - 0.005

Ω - 60A D2PAK

STripFET™ III POWER MOSFET FOR DC-DC CONVERSION

s

TYPICAL RDS(on) = 0.005 Ω @ 10 V

s

RDS(ON) * Qg INDUSTRY’s BENCHMARK

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

s

LOW THRESHOLD DEVICE

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

The STB120NH03L utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology. It is ideal

in high performance DC-DC converter applications where

efficiency is to be achieved at very high output currents.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC-DC

CONVERTERS

Ordering Information

s

TYPE

VDSS

RDS(on)

ID

STB120NH03L

30 V

<0.0055

Ω

60 A(#)

SALES TYPE

MARKING

PACKAGE

PACKAGING

STB120NH03LT4

B120NH03L

TO-252

TAPE & REEL

1

3

D2PAK

TO-263

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(#) Value limited by wire bonding

(1) Starting Tj = 25 oC, ID = 30A, VDD = 15V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 20

V

ID(#)

Drain Current (continuous) at TC = 25°C

60

A

ID(#)

Drain Current (continuous) at TC = 100°C

60

A

IDM(•)

Drain Current (pulsed)

240

A

Ptot

Total Dissipation at TC = 25°C

115

W

Derating Factor

0.77

W/°C

EAS(1)

Single Pulse Avalanche Energy

700

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

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