STB120NH03L datasheet(3/11 Pages) STMICROELECTRONICS

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STB120NH03L

Thermal Impedance

SWITCHING ON (*)

SWITCHING OFF(*)

SOURCE DRAIN DIODE(*)

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(1) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A

(

•)Pulse width limited by Tjmax

(2) Gate charge for synchronous operation

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD = 15 V

ID = 30 A

RG = 4.7 Ω

VGS = 10 V

(Resistive Load, Figure 3)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=15V ID=60A VGS=10V

11.8

7.3

Qoss(1)

Output Charge

VDS= 16 V

VGS= 0 V

Qgls(2)

Third-quadrant Gate Charge

VDS< 0 V

VGS= 10 V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

VDD = 15 V

ID = 30 A

RG = 4.7Ω,

VGS = 10 V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain Current

Source-drain Current (pulsed)

240

VSD (*)

Forward On Voltage

ISD = 30 A

VGS = 0

1.4

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 60 A

di/dt = 100A/µs

VDD = 30 V

Tj = 150°C

(see test circuit, Figure 5)

2.8

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

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