Elektronische Bauelemente

2N7002KT

N-Channel Enhancement MOSFET

29-Apr-2013 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Off Characteristics

2

Drain-Source Breakdown Voltage

60

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

Gate-Source Leakage

-

-

±10

µA

On Characteristics

2

Gate Threshold Voltage

1

1.5

2

V

-

-

7.5

Static Drain-Source On Resistance

-

-

7.5

Forward transfer admittance

1

gfs

80

-

-

mS

Dynamic Characteristics

Input Capacitance

-

25

50

Output Capacitance

-

10

25

Reverse Transfer Capacitance

-

3

5

pF

f=1MHz

Switching Characteristics

Turn-On Delay Time

1

-

12

20

Turn-Off Delay Time

1

-

20

30

nS

Note:

1.

Pulse Test：pulse width ≦ 300µs, Duty cycle ≦ 2％

2.

When mounted on a 1*0.75*0.062 inch glass epoxy board