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2N7002KT Datasheet(PDF) 1 Page - SEC Electronics Inc. |
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2N7002KT Datasheet(HTML) 1 Page - SEC Electronics Inc. |
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1 / 3 page ![]() Elektronische Bauelemente 2N7002KT N-Channel Enhancement MOSFET 29-Apr-2013 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT-523 RS RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS Power Management Load Switch ESD Protected:1500V Easily designed drive circuits MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-523 3K 7 inch MAXIMUM RATINGS (TA=25℃ unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage(Continuous) VGSS ±20 V Continuous ID 115 Drain Current Pulsed IDP 1 800 mA Continuous IDr 115 Reverse drain current Pulsed IDRP 1 800 mA Total Power Dissipation PD 2 225 mW Channel temperature TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Note 1. Pw ≦10 µs, Duty cycle ≦1 % 2. When mounted on a 1*0.75*0.062 inch glass epoxy board Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.50 1.70 K 0.30 0.50 B 0.75 0.95 M --- 10 o C 0.60 0.80 N --- 10 o D 0.23 0.33 S 1.50 1.70 G 0.50BSC J 0.10 0.20 |
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