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SSM0410-C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSM0410-C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  SSM0410-C 3.5A, 100V, RDS(ON) 148m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 26-Oct-2017 Rev. D Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM0410-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSM0410-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch ORDER INFORMATION MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 VGS@10V TC=25°C ID 6 A TA=25°C 3.5 TA=70°C 2.8 Pulsed Drain Current 3 IDM 14 A Total Power Dissipation PD 2.5 W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Thermal Data Thermal Resistance Junction-Ambient 1 RθJA t≦10sec, 50 °C/W Steady State, 85 Thermal Resistance Junction-Ambient 2 RθJA 120 Thermal Resistance Junction-Case 1 RθJC 30 Part Number Type SSM0410-C Lead (Pb)-free and Halogen-free SOT-223 0410 = Date code 1 G 3 S D 24 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.40 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 Top View 1 2 3 4 A M B D L K F G H J E C |
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