SSM0410-C datasheet(2/4 Pages) SECOS

2 / 4 page

SSM0410-C

3.5A, 100V, RDS(ON) 148m

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

26-Oct-2017 Rev. D

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

100

VGS=0, ID=250uA

Gate Threshold Voltage

VGS(th)

2.5

VDS=10V, ID=250uA

Forward Transfer Conductance

gfs

VDS=5V, ID=2A

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

Drain-Source Leakage Current

IDSS

µA

VDS=80V, VGS=0, TJ=25°C

VDS=80V, VGS=0, TJ=55°C

Drain-Source On Resistance

RDS(ON)

148

VGS=10V, ID=2.6A

150

VGS=4.5V, ID=1.7A

Total Gate Charge

VGS=10V

VDS=50V

ID=6A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay Time

Td(on)

17.3

VDD=50V

VGS=10V

ID=1A

RG=3.3

RL=50

Rise Time

2.8

Turn-off Delay Time

Td(off)

Fall Time

2.8

Input Capacitance

Ciss

1077

VDS=15V

VGS=0

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Continuous Source Current

3.5

Pulsed Source Current

ISM

Diode Forward Voltage

VSD

1.2

IS=1A, VGS=0

Reverse Recovery Time

trr

IF=6A, dI/dt=100A/µs

TJ=25°C

Reverse Recovery Charge

Qrr

Notes:

Surface mounted on a 1 inch

2 FR4 board with 2OZ copper.

When mounted on Min. copper pad.

Pulse width limited by Max. junction temperature.

Pulse width≤300us, duty cycle≤2%.

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