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MAS6279D8 Datasheet(PDF) 3 Page - Micro Analog systems |
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MAS6279D8 Datasheet(HTML) 3 Page - Micro Analog systems |
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3 / 12 page ![]() DA6279D8.001 26 September 2017 3 (12) ABSOLUTE MAXIMUM RATINGS All Voltages with Respect to Ground Parameter Symbol Conditions Min Max Unit Note Supply Voltage VDD -0.3 5.0 V Voltage Range for All Pins VIN -0.3 VDD +0.3 V Latchup Current Limit ILUT For all pins, test according to JESD78A. -100 +100 mA Junction Temperature TJ max +150 oC Storage Temperature TS -55 +125 oC 1) ESD Rating Human Body Model (HBM) ±1 kV Note 1: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce data retention time of programmed EEPROM bits. Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum operating conditions and absolute maximum ratings is not implied. Exposure to these conditions for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute maximum ratings may be destructive to the devices. Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD). RECOMMENDED OPERATION CONDITIONS All Voltages with Respect to Ground Parameter Symbol Conditions Min Typ Max Unit Note Supply Voltage VDD 2.6 3.3 3.6 V Supply Voltage at EEPROM Programming VDD T=+25°C 3.0 3.3 3.6 V 1) Operating Temperature TA -40 +25 +85 °C Crystal Pulling Sensitivity S CL=7.2pF 37 ppm/pF Crystal Load Capacitance CL VC = 1.65V 7.2 pF Crystal Rs Rs 20 50 Ω Note 1: The recommended condition for EEPROM programming is room temperature. Note: The device performance may deteriorate in the long run if the Recommended Operation Conditions limits are continuously exceeded. ELECTRICAL CHARACTERISTICS (recommended operating conditions) Parameter Symbol Conditions Min Typ Max Unit Note EEPROM size 70 bit EEPROM data retention TA = +85 °C TA = +125 °C 10 24 1 years Serial Bus (DA/CLK) Clock Frequency fCLK 100 kHz Input High Voltage (DA/CLK) VIH 80% VDD 100% VDD V Input Low Voltage (DA/CLK) VIL 0% VDD 20% VDD V |
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