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MOS FIELD EFFECT TRANSISTOR

2SJ621

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

D15634EJ1V0DS00 (1st edition)

Date Published

May 2002 NS CP(K)

Printed in Japan

2001

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SJ621 is a switching device which can be driven directly

by a 1.8 V power source.

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

• 1.8 V drive available

• Low on-state resistance

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ621

SC-96 (Mini Mold Thin Type)

Marking: XG

–12

V

m8.0

V

m3.5

A

Drain Current (pulse)

Note1

m12

A

0.2

W

Note2

1.25

W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t

≤ 5 sec.

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

0.65

0.9 to 1.1

0 to 0.1

0.16

+0.1

–0.06

0.4

+0.1

–0.05

0.95

1

2

3

1.9

2.9 ±0.2

0.95

1 : Gate

2 : Source

3 : Drain

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain