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FS8601HD Datasheet(PDF) 7 Page - Fortune Semiconductor Corp. |
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FS8601HD Datasheet(HTML) 7 Page - Fortune Semiconductor Corp. |
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7 / 15 page  FS8601Hx 10. Electrical Characteristics FS8601HA(VSS=0V, Ta=25°C unless otherwise specified) PARAMETER CONDITIONS SYMBOL Min Typ Max UNIT Supply Current VDD=3.9V IDD 2.5 5.2 μA Power-Down Current VDD=2.0V IPD 0.05 1.0 μA Overcharge detection voltage VOCU 4.285 4.310 4.335 V Overcharge release voltage VOCR 4.060 4.110 4.160 V Overdischarge detection voltage VODL 2.223 2.300 2.377 V Overdischarge release voltage VODR 2.223 2.300 2.377 V Over current detection voltage VOI1 0.120 0.130 0.140 V Short circuit detection voltage VDD=3.6V VOI2 0.80 0.90 1.00 V Charger over current detection voltage VDD=3.6V VCH -0.11 -0.09 -0.07 V Faulty charger detect voltage Vdet 5.5 8.0 10.5 V Faulty charger recovery voltage Vrec 5.3 7.3 9.3 V 0V charging prohibit VST 0 0 0 V Overcharge detection delay time VDD=4.0V to 4.4V TOC 4 6.25 8.5 s Overdischarge detection delay time VDD=3.0V to 2.0V TOD 65 100 135 ms Over current detection delay time VDD=3.6V TOI1 7.365 11.0 14.25 ms Short circuit detection delay time VDD=3.6V TOI2 0.45 0.750 1.4 ms Charger over current delay time VDD=3.6V Tdet 16.25 32.5 48.75 ms Overcharge timer reset delay time Td1 5.0 16 50.0 ms Charge release delay time Td2 5.0 16 50.0 ms Charge connection detection delay Tdr1 0.3 1 3.0 ms N-MOSFET have low turn-on resistance Drain-Source Breakdown Voltage (BATT- to D12 / D12 to GND) VGS=0V,ID=1mA BVDSS 30 V Breakdown Voltage Temperature Coefficient Reference to 25 , ℃ ID=1mA ΔBVDSS/ΔTj 0.1 V/℃ Static Source-Source On-Resistance (BATT- to GND) VGS=4.5V,ID=1A RSS(ON) 27 36 45 mΩ VGS=3.5V,ID=1A 30 39 48 mΩ VGS=2.5V,ID=1A 33 48 65 mΩ Drain-Source Leakage Current) (BATT- to D12 / D12 to GND) VDS=20V,VGS=0V IDSS (Tj=25℃) 1 uA Rev. 1.3 7/15 |
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