FS8601HD datasheet(8/15 Pages) FORTUNE

8 / 15 page

FS8601Hx

Rev. 1.3

8/15

FS8601HD(VSS=0V, Ta=25°C unless otherwise specified)

PARAMETER

CONDITIONS

SYMBOL

Min

Typ

Max

UNIT

CURRENT CONSUMPTION

Supply Current

VDD=3.9V

IDD

2.5

5.5

μA

Power-Down Current

VDD=2.0V

IPD

0.05

1.0

μA

Overcharge detection voltage

VOCU

4.255

4.280

4.305

Overcharge release voltage

VOCR

4.030

4.080

4.130

Overdischarge detection voltage

VODL

2.200

2.300

2.400

Overdischarge release voltage

VODR

2.200

2.300

2.400

Over current detection voltage

VOI1

0.120

0.130

0.140

Short circuit detection voltage

VDD=3.6V

VOI2

0.60

0.70

0.80

Charger over current detection voltage

VDD=3.6V

VCH

-0.120

-0.100

-0.080

Faulty charger detect voltage

Vdet

6.0

8.0

10.0

Faulty charger recovery voltage

Vrec

5.8

7.3

8.8

0V charging prohibit

VST

0.40

0.65

1.10

Overcharge detection delay time

VDD=4.0V to 4.4V

TOC

0.6

1.35

Overdischarge detection delay time VDD=3.0V to 2.0V

TOD

100

140

Over current detection delay time VDD=3.6V

TOI1

13.3

20.0

26.5

Short circuit detection delay time

VDD=3.6V

TOI2

0.60

1.0

1.80

Charger over current delay time

VDD=3.6V

Tdet

5.10

8.50

12.75

N-MOSFET have low turn-on resistance

Drain-Source Breakdown Voltage

(BATT- to D12 / D12 to GND)

VGS=0V,ID=1mA

BVDSS

Breakdown Voltage Temperature

Coefficient

Reference to 25 ,

℃

ID=1mA

ΔBVDSS/ΔTj

0.1

V/℃

Static Source-Source On-Resistance

(BATT- to GND)

VGS=4.5V,ID=1A

RSS(ON)

mΩ

VGS=3.5V,ID=1A

mΩ

VGS=2.5V,ID=1A

mΩ

Drain-Source Leakage Current)

(BATT- to D12 / D12 to GND)

VDS=20V,VGS=0V

IDSS

(Tj=25℃)

FS8601HD Datasheet(PDF) 8 Page - Fortune Semiconductor Corp.

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