PD533BA datasheet(2/4 Pages) NIKOSEM

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REV 1.2

F-11-2

P-Channel Enhancement Mode

Field Effect Transistor

PD533BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

Drain-Source On-State

Resistance

RDS(ON)

VGS = -4.5V, ID = -15A

mΩ

VGS = -10V, ID = -20A

Forward Transconductance

gfs

VDS = -5V, ID = -20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -20V, f = 1MHz

2670

Output Capacitance

Coss

313

Reverse Transfer Capacitance

Crss

222

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

4.5

Total Gate Charge

Qg (VGS=-10V)

VDS = -20V , ID = -20A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = -20V ,

ID  -20A, VGS = -10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-50

Forward Voltage

VSD

IF = -20A, VGS = 0V

-1.3

Reverse Recovery Time

trr

IF = -20A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

3Package limitation current is -40A.

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