PD537BA datasheet(1/4 Pages) NIKOSEM

Part #	PD537BA

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV 1.0

1

F-9-03

P-Channel Enhancement Mode

Field Effect Transistor

PD537BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±25

V

Continuous Drain Current

2

TC = 25 °C

ID

-71

A

TC = 100 °C

-45

Pulsed Drain Current

1

IDM

-160

Avalanche Current

IAS

-36

Avalanche Energy

L = 0.1mH

EAS

64.8

mJ

Power Dissipation

TC = 25 °C

PD

73

W

TC = 100 °C

29

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

1.7

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Package limitation current is -55A.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1

-1.6

-3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

A

VDS = -20V, VGS = 0V, TJ = 125 °C

-10

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

-30V

8mΩ

-71A

G

S

D

1. GATE

2. DRAIN

3. SOURCE

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PD537BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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