PD537BA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV 1.0

F-9-03

P-Channel Enhancement Mode

Field Effect Transistor

PD537BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

Drain-Source On-State

Resistance

RDS(ON)

VGS = -10V, ID = -20A

6.5

mΩ

VGS = -4.5V, ID = -20A

9.6

Forward Transconductance

gfs

VDS = -5V, ID = -20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

2464

Output Capacitance

Coss

374

Reverse Transfer Capacitance

Crss

271

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

3.8

Total Gate Charge

Qg (VGS=-10V)

VDS = -15V , ID = -20A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

8.3

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = -15V ,

ID  -20A, VGS = -10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-56

Forward Voltage

VSD

IF = -20A, VGS = 0V

-1.3

Reverse Recovery Time

trr

IF = -20A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

3Package limitation current is -55A.

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