PE616BA datasheet(1/4 Pages) NIKOSEM

Part #	PE616BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV 0.9

1

D-22-3

N-Channel Enhancement Mode

Field Effect Transistor

PE616BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

36

A

TC = 100 °C

23

Pulsed Drain Current

1

IDM

100

Continuous Drain Current

TA = 25 °C

ID

12

TA = 70 °C

9.2

Avalanche Current

IAS

23

Avalanche Energy

L = 0.1mH

EAS

26.4

mJ

Power Dissipation

TC = 25 °C

PD

16.7

W

TC = 100 °C

6.7

Power Dissipation

TA = 25 °C

PD

1.7

W

TA = 70 °C

1

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

75

°C / W

Junction-to-Case

RJC

7

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.35

1.8

3

G. GATE

D. DRAIN

S. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

7mΩ

36A

G

D

S

G

S

#1

D

D D

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PE616BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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