PE616BA datasheet(2/4 Pages) NIKOSEM

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REV 0.9

D-22-3

N-Channel Enhancement Mode

Field Effect Transistor

PE616BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 20V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 12A

9.5

mΩ

VGS = 10V, ID = 12A

5.4

Forward Transconductance

gfs

VDS = 5V, ID = 12A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

835

Output Capacitance

Coss

158

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

2.4

Total Gate Charge

VGS = 10V

VDS = 15V , ID = 12A

17.7

VGS = 4.5V

9.5

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

5.1

Turn-On Delay Time

td(on)

VDS = 15V ,

ID  12A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 12A, VGS = 0V

1.2

Reverse Recovery Time

trr

IF = 12A, dlF/dt = 100A / S

13.3

Reverse Recovery Charge

Qrr

5.2

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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