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4

SM2620CSC

®

Copyright

© Sinopower Semiconductor, Inc.

Rev. A.3 - August, 2014

P Channel

Symbol

P arameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

D rain-Source B reakdown Voltage

µA

-30

-

-

V

-

-

-1

Zero Gate Voltage D rain C urrent

-

-

-30

µA

Gate Threshold Voltage

µA

-1.3

-1.8

-2.5

V

Gate Leak age Current

-

-

±10

µA

-

82

100

R

D S(ON)

a

D rain-Source On-State Resistance

-

125

170

m

Ω

Diode Characteristics

a

D iode Forward Voltage

-

-0.75

-1.1

V

R ev erse Recovery Time

-

19

-

ns

R ev erse Recovery Charge

µs

-

14

-

nC

Dynamic Characteristics

b

R

g

Gate Resis tance

-

7

-

Ω

Input Capacitanc e

-

229

-

C

oss

Output Capacitanc e

-

42

-

C

rss

Reverse Transfer Capacitance

Frequenc y= 1.0MHz

-

33

-

pF

Turn-on Delay Time

-

7.2

-

T

r

Turn-on Rise Time

-

9.3

-

t

d(O FF)

Turn-off Delay Time

-

15.4

-

Turn-off Fall Time

Ω,

Ω

-

3.6

-

ns

Gate Charge Characteristics

b

V

-

3.3

-

Total Gate C harge

-

6.5

-

Gate-Source Charge

-

1.1

-

Q

gd

Gate-Drain Charge

-

1.1

-

Threshold Gate Charge

-

0.6

-

nC

Note a: Pulse test; p ulse width

≤300

Note b: Guarante ed by design, not subject to production testing.