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EMB35N04CS Datasheet(PDF) 5 Page - Excelliance MOS Corp.

Part # EMB35N04CS
Description  N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMB35N04CS Datasheet(HTML) 5 Page - Excelliance MOS Corp.

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2013/9/3 
p.5 
EMB35N04CS
Q   ‐ Gate Charge(nC)
0
0
2
4
g
48
I   = 10A
6
8
10
D
12
16
20V
V     = 15V
DS
Gate Charge Characteristics
V   ‐ Drain‐Source Voltage( V )
400
0
0
200
DS
10
Crss
Coss
600
800
Ciss
20
30
40
GS
f  =  1MHz
V    = 0 V
Capacitance Characteristics
20
0
10
30
40
50
Single Pulse
R    = 4.1° C/W
T  = 25° C
C
θJC
t  ,Time (sec)
0.001
0.01
0.1
1
100
10
11000
Single Pulse Maximum Power Dissipation
‐1
t  ,Time (sec)
Transient Thermal Response Curve
10
0.001
‐4
0.01
0.02
10
‐3
10
‐2
10
Single Pulse
0.01
Duty Cycle = 0.5
0.1
0.1
0.05
0.2
1
P
θ
JC
4.R    (t)=r(t) * R
3.T  ‐  T   = P * R     (t)
θ
JC
2.R     =4.1°C/W
1.Duty Cycle,D =
DM
1
1
10
J
1000
100
t1
t2
θ
JC
θ
JC
C
t2
t1
Notes:
MAXIMUM SAFE OPERATING AREA
JC
Tc = 25 C
R    = 4.1 C/W
SINGLE PULSE
GS
V   = 10V
0.5
0.5
1
2
θ
5
°
1
DS
°
R  
    
 Li
mi
t
50
20
10
100
300
200
ds
(o
n)
DC
10
100
100  s
10  s
100m
s
10ms
1ms
μ
μ
V   ,DRAIN‐ SOURCE VOLTAGE( V )
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 



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