EMBA0N10CS datasheet(5/5 Pages) EXCELLIANCE

Part #	EMBA0N10CS

Description	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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5 / 5 page

2013/10/8

p.5

EMBA0N10CS

Single Pulse Time( sec )

Single Pulse Maximum Power Dissipation

0.01

1000

500

0.1

2500

1500

2000

3000

100

1000

R = 4.0 C/W

Single Pulse

T = 25 C

θJC

D C

V ‐ Dr a i n ‐ So u r c e Vo l t a g e ( V )

V = 10 V

Si n g l e Pu l s e

R = 4. 0 ° C/ W

T = 25° C

 JC

D S

)

100

0. 01

0. 1

100

Ma x i m u m Sa f e Op e r a t i n g Ar e a

1 000

Q ‐ Gate Charge( nC )

I = 12A

80V

V = 50V

Gate Charge Characteristics

V ‐ Drain‐Source Voltage( V )

800

400

Crss

Coss

1200

2000

Ciss

f = 1M Hz

V = 0 V

Capacitance Characteristics

100

200

600

1000

1800

1600

1400

single pulse

D=0.5

0.2

0.1

0.05

0.02

0.01

PDM

※Note :

1. RθJC(t)=4.0°C/W Max.

2. Duty Cycle, D=t1/ t2

3. TJM ‐ TC=PDM*RθJC(t)

Transient Thermal Response Curve

t1,Time( sec )

‐2

‐1

‐2

‐3

‐4

‐5

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