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¡ Semiconductor

MSM82C51A-2RS/GS/JS

Differences between MSM82C51A and MSM82C51A-2

1) Manufacturing Process

These devices use a 3 m Si-Gate CMOS process technology and have the same chip size.

2) Function

These devices have the same logics except for changes in AC characteristics listed in (3-2).

3) Electrical Characteristics

3-1) DC Characteristics

Although the output voltage characteristics of these devices are identical, but the measurement

conditions of the MSM82C51A-2 are more restricted than the MSM82C51A.

3-2) AC Characteristics

As shown above, the MSM82C51A-2 satisfies the characteristics of the MSM82C51A.

Parameter

Symbol

MSM82C51A

MSM82C51A-2

RD Pulse Width

250 ns minimum

130 ns minimum

RD Rising to Data Difinition

200 ns maximum

100 ns maximum

RD Rising to Data Float

100 ns maximum

75 ns minimum

WR Pulse Width

250 ns minimum

100 ns minimum

Data Setup Time for WR Rising

150 ns minimum

100 ns minimum

Data Hold Time for WR Rising

20 ns minimum

0 ns minimum

Master Clock Period

250 ns minimum

160 ns minimum

Clock Low Time

90 ns minimum

50 ns minimum

Clock High Time

120 ns minimum

70 ns minimum

Parameter

Symbol

MSM82C51A

MSM82C51A-2

+2.0 mA

+2.5 mA

-400 mA

-2.5 mA