HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200402

Issued Date : 2004.04.01

Revised Date : 2005.03.10

Page No. : 2/6

H06N60U, H06N60E, H06N60F

HSMC Product Specification

Thermal Characteristics

Symbol

Parameter

Value

Units

TO-263

1.7

TO-220AB

1.7

R

θ

JC

Thermal Resistance Junction to Case Max.

TO-220FP

3.3

R

θ

JA

Thermal Resistance Junction to Ambient Max.

62

Symbol

Characteristic

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

600

-

-

V

Drain-Source Leakage Current (V

-

-

1

uA

I

DSS

Drain-Source Leakage Current (V

-

-

50

uA

I

GSSF

Gate-Source Leakage Current-Forward (V

-

-

100

nA

I

GSSR

Gate-Source Leakage Current-Reverse (V

-

-

-100

nA

V

GS(th)

Gate Threshold Voltage (V

2

3

4

V

R

DS(on)

Static Drain-Source On-Resistance (V

-

1

1.2

Ω

g

FS

Forward Transconductance (V

2

4

-

S

C

iss

Input Capacitance

-

1498

-

C

oss

Output Capacitance

-

158

-

C

rss

Reverse Transfer Capacitance

V

-29

-

pF

t

d(on)

Turn-on Delay Time

-

14

-

t

r

Rise Time

-

19

-

t

d(off)

Turn-off Delay Time

-

40

-

t

f

Fall Time

(V

V

-26

-

ns

Q

g

Total Gate Charge

-

35.5

50

Q

gs

Gate-Source Charge

-

8.1

-

Q

gd

Gate-Drain Charge

(V

-

14.1

-

nC

L

D

Internal Drain Inductance (Measured from the drain lead 0.25” from

package to center of die)

-4.5

-

nH

L

S

Internal Drain Inductance (Measured from the drain lead 0.25” from

package to source bond pad)

-7.5

-

nH

*: Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

Source-Drain Diode

Symbol

Characteristic

Min.

Typ.

Max.

Units

V

SD

Forward On Voltage(1)

I

-

1.2

V

t

on

Forward Turn-On Time

-

**

-

ns

t

rr

Reverse Recovery Time

I

-

266

-

ns

**: Negligible, Dominated by circuit inductance