EME07N02A datasheet(4/6 Pages) EXCELLIANCE

Part #	EME07N02A

Description	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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4 / 6 page

2016/2/25

p.4

EME07N02A

Body Diode Forw ard Voltage Variation

with Source Current and Tem perature

25°C

T = 125°C

V ‐ Body Diode Forw ard Voltage( V )

0.001

0.01

0.1

0.4

0.2

0.6

V = 0V

100

1.0

0.8

1.2

‐55°C

1.4

TYPICAL CHARACTERISTICS

0.8

1.2

1.0

1.5

1.4

0.7

-50

-25

100

125

150

TJ, Junction Temperature(°C)

ID= 18A

VGS= 4.5V

On‐Resistance Variation with Temperature

0.9

1.1

1.3

100

6.0

5.0

4.0

3.0

2.0

1.0

VGS, Gate‐Source Voltage( V )

VDS= 5V

TA= -55°C

125°C

25°C

Transfer Characteristics

100

0.5

1.5

2.0

3.0

VGS = 4.5V

2.5V

1.8V

VDS, Drain‐Source Voltage( V )

On‐Region Characteristics

1.0

2.5

2.0

1.8

1.6

1.4

1.2

1.0

0.8

VGS = 1.8V

2.5V

4.5V

ID, Drain Current( A )

On‐Resistance Variation with

Drain Current and Gate Voltage

0.025

0.020

0.010

0.015

0.005

01.25

2.50

3.75

5.00

VGS, Gate‐Source Voltage( V )

On‐Resistance Variation with Gate‐Source Voltage

ID=10A

TA= 125°C

TA= 25°C

EME07N02A Datasheet(PDF) 4 Page - Excelliance MOS Corp.

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