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EME07N02A Datasheet(PDF) 1 Page - Excelliance MOS Corp. |
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EME07N02A Datasheet(HTML) 1 Page - Excelliance MOS Corp. |
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1 / 6 page ![]() 2016/2/25 p.1 EME07N02A G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 15V RDSON (MAX.) 7mΩ ID 65A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±8 V Continuous Drain Current TC = 25 °C ID 65 A TC = 100 °C 41 Pulsed Drain Current 1 IDM 160 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH, ID=35A, RG=25Ω EAS 61.25 mJ Power Dissipation TC = 25 °C PD 50 W TC = 100 °C 20 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=20A, Rated VDS=15V N-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 2.5 °C / W Junction‐to‐Ambient 3 RJA 75 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 375°C / W when mounted on a 1 in2 pad of 2 oz copper. |
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