1

Motorola Bipolar Power Transistor Device Data

High Power NPN Silicon Power

Transistors

. . . designed for linear amplifiers, series pass regulators, and inductive switching

applications.

• Forward Biased Second Breakdown Current Capability

IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771

*MAXIMUM RATINGS

Rating

Symbol

2N3771

2N3772

Unit

Collector–Emitter Voltage

VCEO

40

60

Vdc

Collector–Emitter Voltage

VCEX

50

80

Vdc

Collector–Base Voltage

VCB

50

100

Vdc

Emitter–Base Voltage

VEB

5.0

7.0

Vdc

Collector Current — Continuous

Peak

IC

30

30

20

30

Adc

Base Current — Continuous

Peak

IB

7.5

15

5.0

15

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

150

0.855

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

2N3771, 2N3772

Unit

Thermal Resistance, Junction to Case

θJC

1.17

_C/W

* Indicates JEDEC Registered Data.

200

0

0

25

50

75

100

125

150

175

200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

150

100

50

25

175

125

75

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N3771/D

2N3771

2N3772

*Motorola Preferred Device

20 and 30 AMPERE

POWER TRANSISTORS

NPN SILICON

40 and 60 VOLTS

150 WATTS

*

CASE 1–07

TO–204AA

(TO–3)

REV 7