IRF440-443/IRF840-843

MTM7N45/7N50

N-Channel Power MOSFETs

8A, 450V/500V

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1

Description

These devices are n-channel, enhancement mode, power

MOSFETs designed especially for high voltage, high speed

applications, such as off-line switching power supplies, UPS,

AC and DC motor controls, relay and solenoid drivers.

Silicon Gate for Fast Switching Speeds

Temperature

Rugged

TO-204AA

IRF440

IRF441

IRF442

IRF443

MTM7N45

MTTM7N50

TO-220AB

IRF840

IRF841

IRF842

IRF843

Maximum Ratings

Symbol

Characteristic

Rating

IRF440/442

IRF840/842

MTM7N50

Rating

IRF441/443

IRF841/843

MTM7n45

Unit

Drain to Source Voltage

500

450

V

Drain to Gate Voltage

500

450

V

Gate to Source Voltage

±20

±20

V

Operating Junction and

Storage Temperature

-50 to +150

-50 to +150

℃

TL

Maximum Lead Temperature

for Soldering Purposes,

1/8” From Case for 5S

275

275

℃

Maximum On-State Characteristics

IRF440/441

IRF840/841

IRF442/443

IRF842/843

MTM7N45

MTM7N50

Static Drain-to-Source

On Resistance

0.85

1.1

0.8

Ω

Drain Current

Continuous

Pulsed

8

32

7

28

7

40

A

Maximum Thermal Characteristics

Thermal Resistance,

Junction to Case

1.0

1.0

0.83

℃

/W

Thermal Resistance,

Junction to Ambient

60

60

60

℃

/W

Total Power Dissipation

at Tc=25℃

125

125

150

W

Notes

For Information concerning connection diagram and package outline, refer to

Section 7.