IRFP250B

200V N-Channel MOSFET

www.artschip.com

2

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

200

-

-

V

Breakdown Voltage Temperature

Coefficient

-

0.2

-

V/℃

-

-

10

µA

Zero Gate Voltage Drain Current

-

-

100

µA

Gate-Body Leakage Current, Forward

-

-

100

nA

Gate-Body Leakage Current, Reverse

-

-

-100

nA

On Characteristics

Gate Threshold Voltage

2.0

-

4.0

V

Static Drain-Source

On-Resistance

-

0.071

0.085

Ω

Forward Transconductance

-

27

-

S

Dynamic Characteristics

Ciss

Input Capacitance

-

2600

3400

pF

Coss

Output Capacitance

-

330

430

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

75

100

pF

Switching Characteristics

Turn-On Delay Time

-

30

70

ns

tr

Turn-On Rise Time

-

240

490

ns

Turn-Off Delay Time

-

295

600

ns

tf

Turn-Off Fall Time

(Note 4,5)

-

195

400

ns

Qg

Total Gate Charge

-

95

123

nC

Qgs

Gate-Source Charge

-

13

-

nC

Qgd

Gated-Drain Charge

(Note 4,5)

-

43

-

nC

Drain-Source Diode Characteristics and Maximum Ratings

Is

Maximum Continuous Drain-Source Diode Forward Current

-

-

32

A

Maximum Pulsed Drain-Source Diode Forward Current

-

-

128

A

Drain-Source Diode Forward Voltage

-

-

1.5

V

trr

Reverse Recovery Time

-

220

-

ns

Qrr

Reverse Recovery Charge

dIF/dt=100A/µs

(Note 4)

-

1.89

-

µC

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature

2.

3.

4.

Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤2%

5.

Essentially independent of operating temperature