IRFZ44/45/40/42

N-CHANNEL POWER MOSFETS

www.artschip.com

1

FEATURES

Lower RDS(ON)

Improved inductive ruggedness

Fast switching times

Rugged polysilicon gate cell structure

Lower input capacitance

Extended safe operating area

Improved high temperature reliability

TO-220

IRFZ44/IRFZ45

IRFZ40/IRFZ42

PRODUCT SUMMARY

Part Number

IRFZ44

60V

0.028Ω

35A

IRFZ45

60V

0.035Ω

35A

IRFZ40

50V

0.028Ω

35A

IRFZ42

50V

0.035Ω

35A

*Current limited by wire & pin diameter

MAXIMUM RATINGS

Characteristic

Symbol

IRFZ44

IRFZ45

IRFZ40

IRFZ42

Unit

Drain-Source Voltage (1)

60

50

Vdc

60

50

Vdc

Gate-Source Voltage

±20

Vdc

Continuous Drain Current Tc=25℃

35

35

35

35

Adc

Continuous Drain Current Tc=100℃

35

33

35

33

Adc

Drain Current – Pulsed (3)

210

190

210

190

Adc

Gate Current –Pulsed

±15

Adc

Single Pulsed Avalanche Energy (4)

53

mJ

Avalanche Current

35

A

Total Power Dissipation at Tc=25℃

150

12

Watts

W/℃

Operating and Storage

Junction Temperature Range

-55 to 175℃

℃

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5 seconds

300

℃

Notes: (1) TJ=25℃ to 175℃

(2) Pulse test. Pulse width ≤ 300µs, Duty Cycle ≤2%

(3)Repetitive rating: Pulse with limited by max junction temperature