IXFX44N80P datasheet(1/6 Pages) IXYS

Part #	IXFX44N80P

Description	Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25C to 150C

800

V

DGR

T

J = 25C to 150C, RGS = 1M

800

V

GSS

Continuous

 30

V

GSM

Transient

 40

V

I

D25

T

C = 25C

44

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

100

A

I

A

T

C = 25C

22

A

E

AS

T

C = 25C

3.4

J

dv/dt

I

S

 I

DM, VDD  VDSS, TJ 150C

10

V/ns

P

D

T

C = 25C

1040

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque (TO-264)

1.13/10

Nm/lb.in

F

C

Mounting Force (PLUS247)

20..120 /4.5..27

N/lb

Weight

TO-264

10

g

PLUS247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 800μA

800

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

200 nA

I

DSS

V

DS = VDSS, VGS = 0V

50

A

T

J = 125C

1.5 mA

R

DS(on)

V

GS = 10V, ID = 22A, Note 1

190 m



N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFK44N80P

IXFX44N80P

V

DSS

= 800V

I

D25

= 44A

R

DS(on) 



190m



DS99478F(12/18)

Features

 International Standard Packages

 Fast Intrinsic Diode

 Avalanche Rated

 Low R

DS(on)

 Low Package Inductance

Advantages

 Easy to Mount

 Space Savings

 High Power Density

PolarTM

HiperFETTM

Power MOSFET

G = Gate

D

= Drain

S = Source

Tab = Drain

PLUS247 (IXFX)

Tab

G

D

S

TO-264 (IXFK)

S

G

D

Tab

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