IXFT50N60P3 datasheet(1/6 Pages) IXYS

Part #	IXFT50N60P3

Description	Power MOSFET

PDF	6 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

DS100310B(04/14)

IXFT50N60P3

IXFQ50N60P3

IXFH50N60P3

Polar3TM HiperFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

600

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

600

V

GSS

Continuous

 30

V

GSM

Transient

 40

V

I

D25

T

C = 25C

50

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

125

A

I

A

T

C = 25C25

A

E

AS

T

C = 25C1

J

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

35

V/ns

P

D

T

C = 25C

1040

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247 & TO-3P)

1.13 / 10

Nm/lb.in

Weight

TO-268

4.0

g

TO-3P

5.5

g

TO-247

6.0

g

V

DSS

= 600V

I

D25

= 50A

R

DS(on) 

 160m



Features

 Fast Intrinsic Rectifier

 Avalanche Rated

 Low R

DS(ON) and QG

 Low Package Inductance

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 Switch-Mode and Resonant-Mode

Power Supplies

 DC-DC Converters

 Laser Drivers

 AC and DC Motor Drives

 Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

600

V

GS(th)

V

DS = VGS, ID = 4mA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 125C

2

mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

160 m



G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-268 (IXFT)

S

G

D (Tab)

TO-3P (IXFQ)

D

G

S

D (Tab)

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