IXFN300N10P datasheet(1/5 Pages) IXYS

Part #	IXFN300N10P

Description	Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

DS100016A(02/14)

PolarTM HiPerFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN300N10P

V

DSS

= 100V

I

D25

= 295A

R

DS(on)

 5.5m



t

rr

 200ns

S

G

S

D

miniBLOC

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 175C

100

V

DGR

T

J

= 25

C to 175C, R

GS = 1M

100

V

GSS

Continuous

20

V

GSM

Transient

 30

V

I

D25

T

C = 25C

295

A

I

LRMS

External Lead Current Limit

200

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

900

A

I

A

T

C = 25C

100

A

E

AS

T

C = 25C3

J

dv/dt

I

S

 I

DM, VDD  VDSS,TJ  175C

20

V/ns

P

D

T

C = 25C

1070

W

T

J

-55 ... +175

C

T

JM

175

C

T

stg

-55 ... +175

C

T

L

1.6mm (0.062 in.) from Case for 10s

300

C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL  1mA

t = 1s

3000

V~

M

d

Mounting Torque

1.5/13

Nm/lb.in

Terminal Connection Torque

1.3/11.5

Nm/lb.in

Weight

30

g

Features



International Standard Package



miniBLOC, with Aluminium Nitride

Isolation



Low R

DS(on) and QG



Avalanche Rated



Low Package Inductance



Fast Intrinsic Rectifier

Advantages



High Power Density



Easy to Mount



Space Savings

Applications

• DC-DC Coverters

• Battery Chargers

• Switch-Mode and Resonant-Mode

Power Supplies

• DC Choppers

• AC and DC Motor Drives

• Uninterrupted Power Supplies

• High Speed Power Switching

Applications

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

100

V

GS(th)

V

DS = VGS, ID = 8mA

2.5

5.0

V

I

GSS

V

GS = 20V, VDS = 0V

200

nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 150C

1.5

mA

R

DS(on)

V

GS = 10V, ID = 50A, Note 1

5.5

m



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