BD243C datasheet(2/6 Pages) ONSEMI

2 / 6 page

BD243B BD243C BD244B BD244C

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

BD243B, BD244B

BD243C, BD244C

VCEO(sus)

100

—

Vdc

(IC = 30 mAdc, IB = 0)

BD243B, BD244B

BD243C, BD244C

100

—

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

BD243B, BD243C, BD244B, BD244C

ICEO

—

0.7

mAdc

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

BD243B, BD244B

(VCE = 100 Vdc, VEB = 0)

BD243C, BD244C

ICES

—

400

µAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 0.3 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

—

Collector–Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 1.0 Adc)

VCE(sat)

—

1.5

Vdc

Base–Emitter On Voltage

(IC = 6.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

3.0

—

MHz

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

—

(1) Pulse Test: Pulsewidth

v 300 µs, Duty Cycle v 2.0%.

(2) fT = hfe • ftest

Figure 2. Switching Time Test Circuit

2.0

0.06

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.1

0.07

0.02

0.1

0.2

0.4

0.6

2.0

6.0

td @ VBE(off) = 5.0 V

TJ = 25°C

VCC = 30 V

IC/IB = 10

+ 11 V

VCC

– 30 V

SCOPE

– 4 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

0.03

0.05

1.0

4.0

D1 MUST BE FAST RECOVERY TYPE eg.

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

µs

– 9.0 V

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.2

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