BD243C datasheet(4/6 Pages) ONSEMI

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BD243B BD243C BD244B BD244C

Motorola Bipolar Power Transistor Device Data

500

0.06

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5.0

0.1

0.2

0.3 0.4

0.6

1.0

2.0

6.0

100

2.0

0.06

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.2

0.3

0.6

2.0 3.0 4.0

6.0

0.8

0.4

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

2.0

Figure 10. “On” Voltages

IB, BASE CURRENT (mA)

100

200 300

500

1000

1.6

1.2

0.8

0.4

IC = 1.0 A

TJ = 25°C

2.5 A

5.0 A

300

TJ = 150°C

°C

– 55

°C

VCE = 2.0 V

+ 2.5

0.06

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5

1.0

3.0 0.4

0.6

+ 2.0

+ 1.5

+ 0.5

– 0.5

– 1.0

– 1.5

– 2.0

– 2.5

θVB FOR VBE

θVC FOR VCE(sat)

*APPLIES FOR IC/IB ≤ 5.0

103

Figure 12. Collector Cut-Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

10–1

10– 2

10– 3

– 0.3 – 0.2 – 0.1

+ 0.1 + 0.2 + 0.3

+ 0.4 + 0.5 + 0.6

VCE = 30 V

TJ = 150°C

100

°C

REVERSE

FORWARD

IC = ICES

10M

Figure 13. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

100

120

140

160

1.0M

100k

VCE = 30 V

IC = 10 x ICES

IC ≈ ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

7.0

0.1

1.0

0.4

1.6

1.2

VBE @ VCE = 4.0 V

+ 1.0

2.0

0.1

IC = 2 x ICES

200

4.0

+ 25

°C to + 150°C

– 55

°C to + 25°C

+ 25

°C to + 150°C

– 55

°C to + 25°C

°C

+ 0.7

10k

1.0k

0.1k

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