IXKC13N80C datasheet(1/2 Pages) IXYS

Part #	IXKC13N80C

Description	CoolMOS Power MOSFET ISOPLUS220

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

GS

Continuous

±20

V

I

D25

T

C

= 25

°C; Note 1

13

A

I

D90

T

C

= 90

°C, Note 1

9

A

I

D(RMS)

Package lead current limit

45

A

E

AS

I

D

= 4A, T

C = 25°C

670

mJ

E

AR

I

D

= 10A

0.5

mJ

dv/dt

V

DS < VDSS, IF ≤ 17 A, TVJ = 150°C

6

V/ns

d

S/dt = 100 A/µs

P

D

T

C

= 25

°C

125

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +125

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

RMS leads-to-tab, 50/60 Hz, t = 1 minute

2500

V~

F

C

Mounting force

11 ... 65 / 2.4 ...11 N/lb

Weight

2

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

R

DS(on)

V

GS = 10 V, ID = ID90, Note 3

250

290 m

Ω

V

GS = 10 V, ID = ID90, Note 3 TJ = 125°C

550

m

Ω

V

GS(th)

V

DS = VGS, ID = 1 mA

2

4

V

I

DSS

V

DS = VDSS

T

J = 25°C25

µA

V

GS = 0 V

T

J = 125°C

125

µA

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

G = Gate,

D = Drain,

S = Source

* Patent pending

V

DSS

= 800

V

I

D25

= 13 A

R

DS(on)

= 290 m

Ω

98865 (11/01)

ADVANCE TECHNICAL INFORMATION

ISOPLUS 220TM

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l 3

RD

generation CoolMOS power MOSFET

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped inductive

switching (UIS)

l Low thermal resistance due to reduced

chip thickness

l Low drain to tab capacitance(<30pF)

Applications

l Switched Mode Power Supplies (SMPS)

l Uninterruptible Power Supplies (UPS)

l Power Factor Correction (PFC)

l Welding

l Inductive Heating

Advantages

l Easy assembly: no screws or isolation

foils required

l Space savings

l High power density

G

D

S

Isolated back surface*

CoolMOS Power MOSFET

ISOPLUS220TM

Electrically Isolated Back Surface

N-Channel Enhancement Mode

Low R

DS(on), High Voltage MOSFET

IXKC 13N80C

COOLMOS is a trademark of Infineon

Technology.

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