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SSM9930M
10/21/2004 Rev.1.01
N-channel Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=1mA
-
0.037
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
-
33
m
Ω
VGS=4.5V, ID=3A
-
-
60
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5.2
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
-
nA
Qg
Total Gate Charge
2
ID=5A
-
7.1
-
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.8
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
7.2
-
ns
tr
Rise Time
ID=1A
-
10.4
-
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS =10V
-
18
-
ns
tf
Fall Time
RD=15Ω
-
7.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
-
pF
Coss
Output Capacitance
VDS=25V
-
230
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
94
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=1.7A, VGS=0V
-
21.4
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
±100
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