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SSM9930M
10/21/2004 Rev.1.01
DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE
POWER MOSFETS
Simple drive requirement
N-CH
BV DSS
30V
Low on-resistance
R DS(ON)
33m
Ω
Full-bridge applications, such as
I D
6.3A
LCD monitor inverter
P-CH
BV DSS
-30V
RDS(ON)
55m
Ω
Description
ID
-5.1A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
± 25
±25
V
ID @ TA=25°C
Continuous Drain Current
3
6.3
-5.1
A
ID @ TA=70°C
Continuous Drain Current
3
4.2
-3.4
A
IDM
Pulsed Drain Current
1
20
-20
A
PD @ TA=25°C
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
°C/W
Parameter
Thermal Data
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
N1G
N1D/P1D
N1S/N2S
N2G
P1G
P1S/P2S
N2D/P2D
P2G
SO-8
N1G
N1S
P1G
P1S
P1N1D
N2G
N2S
P2G
P2S
P2N2D
The SSM9930M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for applications such as low-voltage inverters and motor drives.
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