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MBF110PFWLPES Datasheet(PDF) 1 Page - fujitsu semiconductor

Part # MBF110PFWLPES
Description  Solid-State Fingerprint Sensor
PDF  24 Pages
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Manufacturer  FUJITSU [fujitsu semiconductor]
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MBF110PFWLPES Datasheet(HTML) 1 Page - fujitsu semiconductor

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MBF110
Solid-State Fingerprint Sensor
Applications
• Database and network access
• Portable fingerprint acquisition
• Access control (home, auto, office, etc.)
•ATM
• Smart cards
• Cellular phone security access
Overview
The Fujitsu MBF110 Solid-State Fingerprint Sensor is a direct
contact, fingerprint acquisition device. It is a high performance,
low power, low cost, capacitive sensor with an integrated two-
dimensional array of metal electrodes in the sensing array. Each
metal electrode acts as one plate of a capacitor and the contacting
finger acts as the second plate.A passivation layer on the device
surface forms the dielectric between these two plates. Ridges and
valleys on the finger yield varying capacitor values across the array,
which is read to form an image of the fingerprint.
The MBF110 is manufactured in standard CMOS technology and
is available in an 80-pin,VSPA 80/1 and LQFP 80/1.The 300
×
300 sensor array has a 50
µm pitch and yields a 500-dpi image.The
sensor surface is protected by a patented, ultra-hard, abrasion and
chemical resistant coating.
80-pin TSOP (LQFP)
80-pin SOP (VSPA)
Packages
A block diagram of the MBF110 is shown in Figure 1.The
MBF110 has an integrated 8-bit flash analog-to-digital converter
to digitize the output of the sensor array.The fingerprint image is
transmitted on an 8-bit bi-directional bus interface compatible
with most microprocessors.
For SETCUR resistor differences between the MBF110 see the Pin
Information table.
Features
• Non-optical solid-state device
• 300
× 300 sensor array, 50 µm pitch
• 1.5 cm
× 1.5 cm sensor area
• 500-dpi resolution
• Operation from 3V to 5.5V
• Ultra-hard protective coating
• Integrated 8-bit flash analog-to-digital converter
• 8-bit microprocessor interface
• Standard CMOS technology
• Low power, less than 200 mW


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