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TMCS1101 Datasheet(PDF) 10 Page - Texas Instruments |
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TMCS1101 Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 31 page ![]() OS OE I V / S OE OUT,0A S V V V * 0.5 OE OUT,0A S V V V * 0.1 ' § · u ' u ¨ ¸ q © ¹ S, T drift ppm e % S T 1000 C 10 TMCS1101 SBOS825 – SEPTEMBER 2019 www.ti.com Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Accuracy Parameters (continued) Sensitivity error drift is the worst-case change in sensitivity error per degree Celsius change in ambient temperature. This parameter is reported in ppm/°C. To convert sensitivity error drift to a percentage for a given change in temperature, multiply the drift by the change in temperature and convert to percentage, as in Equation 3. where • Sdrift is the sensitivity error drift. • ΔT is the temperature range from 25°C. (3) 8.1.2 Offset Error and Drift Offset error is the deviation from the ideal output voltage with zero input current through the device. Offset error can be referred to the output as a voltage error VOE or referred to the input as a current offset error IOS; however, offset error is a single error source and must only be included once in error calculations. The output voltage offset error of the TMCS1101 is the deviation of the measured VOUT with zero input current from the ideal value of the zero current output voltage. This ideal voltage is either 10% of VS for unidirectional devices (AxU) or 50% of VS for bidirectional devices (AxB), as shown in Equation 4 and Equation 5, respectively. (4) where • VOUT,0A is the device output voltage with zero input current. (5) The total offset error includes multiple individual error sources: errors in the internal reference, the magnetic offset of the Hall sensor, and any offset voltage errors of the signal chain. The input referred (RTI) offset error is the output voltage offset error divided by the sensitivity of the device, shown in Equation 6. Refer the offset error to the input of the device to allow for easier total error calculations and direct comparison to input current levels. However the calculations are done, the error sources quantified by VOE and IOS are the same, and must only be included once for error calculations. (6) Offset error specifications are defined at both room temperature and across the full temperature range. Offset error specified over a temperature range is the worst-case sensitivity error at any temperature within the range, and must not be considered as additive to room temperature offset error. Offset error drift is the worst-case rate of change in a device offset across the temperature spectrum, and is used to calculate maximum offset error across an arbitrary temperature range in the same manner as sensitivity drift, and as described in the Total Error Calculation Examples section. 8.1.3 Nonlinearity Error Nonlinearity is the deviation of the output voltage from a linear relationship to the input current. Nonlinearity voltage, as shown in Figure 1, is the maximum voltage deviation from the best-fit line based on measured parameters, calculated by Equation 7. VNL = VOUT,MEAS – (IMEAS × Sfit + VOUT,0A) where • VOUT,MEAS is the voltage output at maximum deviation from best fit. • IMEAS is the input current at maximum deviation from best fit. • Sfit is the best-fit sensitivity of the device. • VOUT,0A is the device zero current output voltage. (7) Nonlinearity error (eNL) for the TMCS1101 is the nonlinearity voltage specified as a percentage of the full-scale output range (VFS), as shown in Equation 8. |
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