2014. 04. 03

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SEMICONDUCTOR

TECHNICAL DATA

Revision No : 0

FEATURES

UP SIDE

• Very Low Forward Voltage Drop

• Low Reverse Current

• 0.1 A of Continuous Forward Current

• ESD Rating −Human Body Model: Class 3B >8kv

−Machine Model: Class C >400V

• Very High Switching Speed

BACK SIDE

• These Devices are Pb−Free, Halogen Free/BFR Free

and are RoHS Compliant

Mechanical Data

Case: DSN-2(0201)

Terminals: Au Plated, solderable per

MIL-STD-750, Method 2026

Electrical Characteristic

Parameter Symbol

Symbol

Unit

Device marking code

Maximum repetitive peak reverse

voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forward rectified

current

A

Peak forward surge current 8.3ms

single half sine-wave superimposed on

rated load (JEDEC Method)

A

Typical thermal resistance (Note 1)

(Note 2)

°C/W

Total Power Dissipation @ Ta = 25°C

PD

mW

Operating junction temperature range

°C

Storage temperature range

°C

Parameter Symbol

symbol

Unit

Maximum DC reverse current at rated

uA

NOTES:

1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.

V

50

FDR01F20

FDR01F30

FDR01F40

Maximum instantaneous forward

voltage at(IF = 0.01 A, TJ = 25°C)

(IF = 0.1 A, TJ = 25℃)

0.37

0.43

0.37

0.43

0.40

0.46

–40 to +150

14

21

28

20

30

40

0.1

4

400

170

312

–40 to +125

01F20

01F30

01F40

20

30

40

Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 0.1A

FDR01F20

FDR01F30

FDR01F40

01F40

DSN-2(0201)

FDR01F20~FDR01F40