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STM32H742AI Datasheet(PDF) 319 Page - STMicroelectronics |
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STM32H742AI Datasheet(HTML) 319 Page - STMicroelectronics |
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319 / 357 page ![]() DS12110 Rev 7 319/357 STM32H742xI/G STM32H743xI/G Electrical characteristics (rev V) 322 Ethernet interface characteristics Unless otherwise specified, the parameters given in Table 212, Table 213 and Table 214 for SMI, RMII and MII are derived from tests performed under the ambient temperature, frcc_c_ck frequency and VDD supply voltage conditions summarized in Table 122: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 10 • Capacitive load CL=20 pF • Measurement points are done at CMOS levels: 0.5VDD • IO Compensation cell activated. • HSLV activated when VDD ≤ 2.7 V • VOS level set to VOS1 Refer to Section 7.3.15: I/O port characteristics for more details on the input/output characteristics: Figure 115. Ethernet SMI timing diagram Table 212. Dynamics characteristics: Ethernet MAC signals for SMI (1) 1. Guaranteed by characterization results. Symbol Parameter Min Typ Max Unit tMDC MDC cycle time( 2.5 MHz) 400 400 403 ns Td(MDIO) Write data valid time 0.5 1.5 4 tsu(MDIO) Read data setup time 12.5 - - th(MDIO) Read data hold time 0 - - MS31384V1 ETH_MDC ETH_MDIO(O) ETH_MDIO(I) tMDC td(MDIO) tsu(MDIO) th(MDIO) |
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