74LVC30AD datasheet(6/13 Pages) NEXPERIA

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Nexperia

74LVC30A

8-input NAND gate

10. Dynamic characteristics

Table 7. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit, see Fig. 7.

-40 °C to +85 °C

-40 °C to +125 °C

Symbol Parameter

Conditions

Min

Typ[1]

Max

Min

Max

Unit

A, B, C, D, E, F, G, H to Y;

see Fig. 6

[2]

VCC = 1.2 V

13.2

VCC = 1.65 V to 1.95 V

2.2

5.9

11.6

2.2

12.3

VCC = 2.3 V to 2.7 V

1.6

3.9

7.3

1.6

7.9

VCC = 2.7 V

1.5

4.1

7.3

1.5

7.8

tpd

propagation delay

VCC = 3.0 V to 3.6 V

1.4

3.6

6.3

1.4

6.8

per gate; VI = GND to VCC

[3]

VCC = 1.65 V to 1.95 V

12.5

VCC = 2.3 V to 2.7 V

13.5

CPD

power dissipation

capacitance

VCC = 3.0 V to 3.6 V

15.5

[1] Typical values are measured at Tamb = 25 °C and VCC = 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in μW).

PD = CPD x VCC2 x fi x N + Σ(CL x VCC2 x fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volt;

N = number of inputs switching;

Σ(CL x VCC2 x fo) = sum of the outputs.

10.1. Waveform and test circuit

aaa-013467

GND

VOH

Y output

A, B, C, D,

E, F, G, H

input

VOL

tPHL

tPLH

VM = 1.5 V at VCC ≥ 2.7 V

VM = 0.5 x VCC at VCC < 2.7 V.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig. 6. Input (A, B, C, D, E, F, G, H) to output (Y) propagation delays

74LVC30A

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Product data sheet

Rev. 2 — 15 March 2019

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