PDTC124XMB datasheet(6/12 Pages) NEXPERIA

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PDTC124XMB

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Product data sheet

Rev. 1 — 26 June 2012

5 of 11

NXP Semiconductors

PDTC124XMB

NPN resistor-equipped transistor; R1 = 22 k

Ω, R2 = 47 kΩ

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig 4.

DC current gain as a function of collector

current; typical values

Fig 5.

Collector-emitter saturation voltage as a

function of collector current; typical values

VCE = 0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = 5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 6.

On-state input voltage as a function of collector

current; typical values

Fig 7.

Off-state input voltage as a function of collector

current; typical values

IC (mA)

10−1

102

006aaa174

102

103

hFE

(1)

(2)

(3)

IC (mA)

1102

006aaa175

102

103

VCEsat

(mV)

(1)

(2)

(3)

006aaa176

IC (mA)

10−1

102

VI(on)

(V)

10−1

(1)

(3)

(2)

006aaa177

IC (mA)

10−2

10−1

VI(off)

(V)

10−1

(1)

(3)

(2)

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