BAS116T

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 2 — 9 July 2012

2 of 10

NXP Semiconductors

BAS116T

Single low leakage current switching diode

3.

Ordering information

4.

Marking

5.

Limiting values

[1]

[2]

[3]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BAS116T

SC-75

plastic surface-mounted package; 3 leads

SOT416

Table 4.

Marking codes

Type number

Marking code

BAS116T

ZY

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse

voltage

-85

V

reverse voltage

-

75

V

forward current

[1] -215

mA

repetitive peak forward

current

-500

mA

non-repetitive peak

forward current

square wave

[2]

4

A

-

1

A

-

0.5

A

total power dissipation

[3] -150

mW

junction temperature

-

150

C

ambient temperature

55

+150

C

storage temperature

65

+150

C