BAS116T

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Product data sheet

Rev. 2 — 9 July 2012

3 of 10

NXP Semiconductors

BAS116T

Single low leakage current switching diode

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Soldering point of cathode tab.

7.

Characteristics

[1]

[2]

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

833

K/W

thermal resistance from

junction to solder point

[2] -

-

350

K/W

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

[1]

--0.9

V

--1

V

--1.1

V

--1.25

V

reverse current

-

0.003 5

nA

3

80

nA

reverse recovery

time

[2] -0.8

3

s

diode capacitance

-

2

-

pF