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PQMH2 Datasheet(PDF) 1 Page - Nexperia B.V. All rights reserved |
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PQMH2 Datasheet(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 14 page ![]() PQMH2 NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 4 November 2015 Product data sheet 1. General description NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD12. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Low package height of 0.37 mm • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified 3. Applications • Low current peripheral driver • Control of IC inputs • Replaces general-purpose transistors in digital applications • Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA Per transistor R1 bias resistor 1 [1] 33 47 61 kΩ R2/R1 bias resistor ratio Tamb = 25 °C [1] 0.8 1 1.2 [1] See section "Test information" for resistor calculation and test conditions. |
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