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FTA1952 Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTA1952 Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 3 page ![]() 2014. 04. 17 2/3 FTA1952 Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage (BR)CBO IC=-50μA,IE=0 -100 V Collector-emitter breakdown voltage (BR)CEO IC=-1mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -10 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -10 μA hFE(1) * VCE=-2V, IC=-1A 120 270 DC current gain hFE(2) * VCE=-2V, IC=-3A 40 IC=-3A,IB=-0.15A -0.3 V Collector-emitter saturation voltage VCE(sat) * IC=-4A,IB=-0.2A -0.5 V IC=-3A,IB=-0.15A -1.2 V Base-emitter saturation voltage VBE(sat) * IC=-4A,IB=-0.2A -1.5 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 130 pF Transition frequency fT * VCE=-10V,IC=-0.5A, f=30MHz 80 MHz Turn-on time ton VCC=-30V, IC=-3A,IB1=-IB2=150mA 0.3 μs Storage time tS 1.5 μs Fall time tf 0.3 μs Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. V V |
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