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IX4351NETR Datasheet(PDF) 5 Page - IXYS Corporation

Part # IX4351NETR
Description  9A Low Side SiC MOSFET & IGBT Driver
PDF  10 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IX4351NETR Datasheet(HTML) 5 Page - IXYS Corporation

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INTEGRATED CIRCUITS DIVISION
IX4351NE
R01
www.ixysic.com
5
1.5.3 Charge Pump Section
1.5.4 Desaturation Section
1.5.5 Thermal Shutdown Section
1.5.6 Logic Input Section
1.5.7 FAULT Section
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
Negative Bias Rail Voltage Range
-
VSS
-8
-VDD
-3.5
V
Maximum VSS Current
CFLY=66nF, RFLY=33
ISS
--
50
mA
Charge Pump Frequency
-
fOSC
90
124
160
kHz
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
DESAT Source Current
VDESAT=0V
IDESAT
400
570
750
A
DESAT Threshold Voltage
-
VTH,DESAT
66.88
V
Blanking Time
-
tBLANK
-
250
-
ns
DESAT Pull Down Resistance
-
RDESAT
-
900
-
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
Thermal Shutdown Temperature
-
TSD
-
160
-
°C
Thermal Shutdown Hysteresis
-
TSDHYS
-20-
°C
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
High Level Input Voltage
-
VINH
2.2
-
-
V
Low Level Input Voltage
-
VINL
--
1
V
Input Hysteresis
-
VINHYS
0.2
0.4
-
V
High Level Input Current
VIN=5v
IINH
--
70
A
Low Level Input Current
VIN=0V
IINL
--
-10
A
Input Pull-Down Resistance
-
RIN
-
100
-
k
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
Output Low Voltage
IFAULT=20mA
VFAULTL
--
0.8
V
Output Leakage Current
VFAULT=25V
IFAULT
-0.1
10
A
DESAT Detect to FAULT Delay
-
tFAULTDLY
-
150
-
ns



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