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IRFS3607PBF Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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IRFS3607PBF Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 7 page ![]() General Description -channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=85V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage ( VGS=0V) 85 V VGS Gate-Source Voltage ( VDS=0V) ±25 V ID (DC) Drain Current (DC) at Tc=25℃ 92 A ID (DC) Drain Current (DC) at Tc=100℃ 64.4 A IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) 368 A dv/dt Peak Diode Recovery Voltage 30 V/ns PD Maximum Power Dissipation(Tc=25℃) 139 W Derating Factor 0.93 W/℃ EAS Single Pulse Avalanche Energy (Note 2) 625 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃ Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=40V,V B GB=10V,RG=25Ω Schematic Diagram VDS = 85 V ID = 92A RDS(ON) = 6.2 mΩ The 3607 series is N IRFB3607PbF/IRFS3607PbF/IRFSL3607PbF Pb Free Plating Product IRFB3607PbF/IRFS3607PbF/IRFSL3607PbF Pb ThinkiSemi 85V,92A N-Channel Trench Process Power MOSFETs G D S ● Inverter Application ● Amplifier Application G D S IRFB3607PbF (TO-220 HeatSink) IRFS3607PbF (TO-263/D2PAK) © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/7 Rev.10T G D S IRFSL3607PbF (TO-262/I2PAK) ● PhotoVoltaic Application 1 2 3 |
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