STG25H120F2D7 datasheet(4/10 Pages) STMICROELECTRONICS

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Electrical ratings

STG25H120F2D7

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DocID027364 Rev 1

Electrical ratings

Table 3. Absolute maximum ratings (TJ = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

1200

VGE

Gate-emitter voltage

±20

Continuous collector current limited by TJmax

25(1)

Depending on thermal properties of assembly

ICP

(1)(2)

Pulse width limited by maximum junction temperature.

Pulsed collector current, Tp limited by TJmax

tSC

(3)

Not tested at chip level, verified by design/characterization.

Short circuit with stand time

VCC= 600 V,VGE= 15 V, TJstart ≤ 150°C

5µs

Operating junction temperature

- 55 to 175

°C

Table 4. Static characteristics (tested on wafer unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC = 1 mA, VGE = 0 V

1200

VCE(sat)

Collector-emitter

saturation voltage

VGE = 25 V, IC= 15 A

2.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 500µA

IGES

Gate-emitter leakage

current

VGE = ± 20V, VCE = 0 V

± 250

ICES

Collector cut-off current

VCE = 1200 V, VGE= 0

µA

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