STWA30N65DM6AG datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STWA30N65DM6AG

Description	Automotive-grade N-channel 650 V, 90 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 12 page

Figure 7. Typical capacitance characteristics

GADG220120200825CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

CISS

COSS

CRSS

f=1MHz

Figure 8. Normalized gate threshold vs temperature

GADG220120200826VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID =250µA

Figure 9. Normalized on-resistance vs temperature

GADG220120200827RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

VGS = 10 V

TJ (°C)

Figure 10. Typical output capacitance stored energy

GADG220120200830EOS

100 200 300 400 500 600

(uJ)

VDS (V)

EOSS

Figure 11. Normalized breakdown voltage vs temperature

GADG220120200827BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

TJ (°C)

ID = 1 mA

Figure 12. Typical reverse diode forward characteristics

GADG220120200829SDF

1.2

1.1

1.0

0.9

0.8

0.7

0.6

VSD

(V)

ISD (A)

TJ =-50°C

TJ =25°C

TJ =150°C

STWA30N65DM6AG

Electrical characteristics

(curves)

DS13232 - Rev 1

page 6/12

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